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| 2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current Total Power Dissipation at T amb 25 C at T cas e 25 C Storage and Junction Temperature Value - 200 - 200 -4 -1 1 10 - 55 to 200 Unit V V V A W W C 1/4 2N5415S THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO I CEO I E BO V( BR) CEO * Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-emitter Breakdown Voltage (I B = 0) Collector-emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency Collector-base Capacitance Test Conditions V CB = - 175 V V CE = - 150 V V EB = - 4 V Min. Typ. Max. - 50 - 50 - 20 Unit A A A I C = - 2 mA - 200 V V CE( sat )* VB E * h F E* fT C CBO I C = - 50 mA I C = - 50 mA I C = - 50 A I C = - 10 mA f = 5 MHz IE = 0 f = 1 MHz I B = - 5 mA V CE = - 10 V V CE = - 10 V V CE = - 10 V 15 V CB = - 10 V 30 - 2.5 - 1.5 150 V V MHz 15 pF * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 2N5415S TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 3/4 2N5415S Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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